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mrf6s19060nr1 MRF6S19060NBR1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for n - cdma base station applications with frequencies from 1930 to 1990 mhz. suitable for tdma, cdma and multicarrier amplifier applica- tions. to be used in class ab fo r p c n - p c s / c e l l u l a r r a d i o a n d w l l applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 610 ma, p out = 12 watts avg., full frequency band, is - 95 cdma (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 16 db drain efficiency ? 26% im3 @ 2.5 mhz offset ? - 37 dbc in 1.2288 mhz bandwidth acpr @ 885 khz offset ? - 51 dbc in 30 khz bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 1960 mhz, 60 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? designed for lower memory effects and wide instantaneous bandwidth applications ? 200 c capable plastic package ? n suffix indicates lead - free terminations. rohs compliant. ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +175 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 81 c, 60 w cw case temperature 79 c, 12 w cw r jc 0.84 1.0 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf6s19060n rev. 3, 5/2006 freescale semiconductor technical data mrf6s19060nr1 MRF6S19060NBR1 1930 - 1990 mhz, 12 w avg., 28 v 2 x n - cdma lateral n - channel rf power mosfets case 1486 - 03, style 1 to - 270 wb - 4 plastic mrf6s19060nr1 case 1484 - 04, style 1 to - 272 wb - 4 plastic MRF6S19060NBR1 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 1.5 2.2 2.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 610 madc) v gs(q) 2 2.8 4 vdc drain- source on - voltage (v gs = 10 vdc, i d = 2.0 adc) v ds(on) 0.2 0.3 0.4 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 610 ma, p out = 12 w avg., f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz, 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz channel bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz channel bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 14.5 16 18.5 db drain efficiency d 24.5 26 ? % intermodulation distortion im3 ? -37 -35 dbc adjacent channel power ratio acpr ? -51 -48 dbc input return loss irl ? -12 -10 db 1. part is internally matched both on input and output.
mrf6s19060nr1 MRF6S19060NBR1 3 rf device data freescale semiconductor figure 1. mrf6s19060nr1(nbr1) test circuit schematic z11 0.225 x 0.083 microstrip z12 0.325 x 0.500 microstrip z13 0.450 x 0.083 microstrip z14 0.300 x 0.245 microstrip z15 0.195 x 0.083 microstrip z16 1.150 x 0.070 microstrip z17 1.150 x 0.083 microstrip pcb arlon ad250, 0.030 , r = 2.5 z1 0.250 x 0.083 microstrip z2 0.750 x 0.083 microstrip z3 0.375 x 0.425 microstrip z4 0.370 x 0.083 microstrip z5 0.365 x 1.000 microstrip z6 0.650 x 0.080 microstrip z7, z8 0.115 x 1.000 microstrip z9 0.240 x 1.000 microstrip z10 0.310 x 0.315 microstrip v bias v supply rf output rf input dut c6 c1 c2 c3 c4 c5 r1 z1 z2 z3 z4 c7 z9 c8 z10 z8 z5 r2 z6 r3 z7 z11 z12 z13 z14 z15 z17 z16 v supply c9 c10 c11 table 6. mrf6s19060nr1(nbr1) test circuit component designations and values part description part number manufacturer c1 100 nf chip capacitor cdr33bx104akws kemet c2, c3, c7, c8, c9 6.8 pf chip capacitors 600b6r8bt250xt atc c4, c5, c6, c10, c11 10 f, 50 v chip capacitors grm55dr61h106ka88l murata r1 1 k chip resistor r2 10 k chip resistor r3 10 chip resistor
4 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1 figure 2. mrf6s19060nr1(nbr1) test circuit component layout mrf6s19060n/nb rev. 2 r1 r2 r3 c1 c6 c2 c7 c3 c4 c5 c8 c9 c10 c11 cut out area
mrf6s19060nr1 MRF6S19060NBR1 5 rf device data freescale semiconductor typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?30 ?10 ?14 ?22 ?26 2000 1900 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier n - cdma broadband performance @ p out = 12 watts avg. 1990 1960 1950 1940 1930 1920 1910 16.6 ?60 27 26.5 26 25.5 25 ?36 ?42 ?54 d , drain efficiency (%) d 16.5 16.4 16.3 16.2 16.1 16 15.9 15.8 15.7 1970 1980 ?48 ?30 ?18 v dd = 28 vdc, p out = 12 w (avg.) i dq = 610 ma, 2?carrier n?cdma 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?30 ?10 ?14 ?22 ?26 2000 1900 irl g ps acpr im3 f, frequency (mhz) figure 4. 2 - carrier n - cdma broadband performance @ p out = 24 watts avg. 1990 1960 1950 1940 1930 1920 1910 16.2 ?45 38.5 38 37.5 37 36.5 ?25 ?30 ?40 d , drain efficiency (%) d 16.1 16 15.9 15.8 15.7 15.6 15.5 15.4 15.3 1970 1980 ?35 ?20 ?18 v dd = 28 vdc, p out = 24 w (avg.) i dq = 610 ma, 2?carrier n?cdma 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) figure 5. two - tone power gain versus output power 10 12 18 1 i dq = 915 ma 763 ma p out , output power (watts) pep 200 g ps , power gain (db) 17 16 15 13 610 ma 458 ma 305 ma figure 6. third order intermodulation distortion versus output power ?10 110 ?20 ?30 ?40 200 ?60 ?50 p out , output power (watts) pep intermodulation distortion (dbc) imd, third order i dq = 305 ma 915 ma 763 ma 458 ma 610 ma 15.2 14 100 v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurements, 2.5 mhz tone spacing v dd = 28 vdc, f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurements, 2.5 mhz tone spacing 100
6 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1 typical characteristics 100 12 19 1 0 70 p out , output power (watts) cw 10 18 16 14 60 50 40 30 d , drain efficiency (%) g ps , power gain (db) 17 15 13 v dd = 28 vdc i dq = 610 ma f = 1960 mhz d g ps im3 (dbc), acpr (dbc) figure 7. intermodulation distortion products versus tone spacing 10 ?60 ?10 0.1 7th order two?tone spacing (mhz) v dd = 28 vdc, p out = 60 w (pep), i dq = 610 ma two?tone measurements (f1 + f2)/2 = center frequency of 1960 mhz 5th order 3rd order ?20 ?30 ?40 ?50 1 100 figure 8. pulse cw output power versus input power figure 9. 2 - carrier n - cdma acpr, im3, power gain and drain efficiency versus output power 0 ?70 p out , output power (watts) avg. 60 ?10 ?30 40 30 ?40 10 10 100 ?50 37 53 p3db = 49.503 dbm (89.19 w) p in , input power (dbm) v dd = 28 vdc, i dq = 610 ma pulsed cw, 8 sec(on), 1 msec(off) f = 1960 mhz 49 45 41 39 27 25 31 29 35 actual ideal 51 47 43 23 figure 10. power gain and drain efficiency versus cw output power figure 11. power gain versus output power p out , output power (watts) cw im3 g ps d , drain efficiency (%), g ps , power gain (db) imd, intermodulation distortion (dbc) p out , output power (dbm) g ps , power gain (db) v dd = 12 v 16 v 100 12 17 0 14 13 20 15 16 i dq = 610 ma f = 1960 mhz 50 ?60 d acpr 20 v 24 v 28 v 32 v 33 1 ?20 40 60 80 v dd = 28 vdc, i dq = 610 ma f1 = 1958.75 mhz, f2 = 1961.25 mhz 2?carrier n?cdma, 2.5 mhz carrier spacing, 1.2288 mhz channel bandwidth par = 9.8 db @ 0.01% probability (ccdf) 10 20 p1db = 48.792 dbm (75.72 w) 20 t c = ?30 c 85 c ?30 c 25 c 25 c 85 c ?30 c 25 c ?30 c 85 c 25 c t c = ?30 c 85 c 25 c 85 c ?30 c
mrf6s19060nr1 MRF6S19060NBR1 7 rf device data freescale semiconductor typical characteristics n - cdma test signal 210 10 9 90 t j , junction temperature ( c) figure 12. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 10 6 120 140 160 180 190 mttf factor (hours x amps 2 ) 100 110 130 150 170 200 10 0.0001 100 0 peak?to?average (db) figure 13. 2 - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) f, frequency (mhz) ?100 0 figure 14. 2 - carrier n - cdma spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?acpr in 30 khz integrated bw +acpr in 30 khz integrated bw ?im3 in 1.2288 mhz integrated bw +im3 in 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 (db)
8 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1 f mhz z source z load 1930 1960 1990 4.15 - j5.58 4.22 - j5.10 4.17 - j5.34 4.54 - j7.95 4.33 - j7.74 4.20 - j7.43 v dd = 28 vdc, i dq = 610 ma, p out = 12 w avg. z o = 10 z load f = 1930 mhz z source z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network figure 15. series equivalent source and load impedance f = 1990 mhz f = 1930 mhz f = 1990 mhz
mrf6s19060nr1 MRF6S19060NBR1 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1 notes
mrf6s19060nr1 MRF6S19060NBR1 11 rf device data freescale semiconductor notes
12 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1 package dimensions case 1486 - 03 issue c datum plane bottom view a1 2x d1 e3 e1 d3 e4 a2 pin 5 note 8 a b c h drain lead d a m aaa c 4x b1 2x d2 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension ? b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the ? b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. hatching represents the exposed area of the heat slug. c1 f zone j e2 2x a dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .712 .720 18.08 18.29 d1 .688 .692 17.48 17.58 d2 .011 .019 0.28 0.48 d3 .600 ? ? ? 15.24 ? ? ? e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 e2 .132 .140 3.35 3.56 e3 .124 .132 3.15 3.35 e4 .270 ? ? ? 6.86 ? ? ? f b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 bsc .106 bsc 0.64 bsc 2.69 bsc 1 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source aaa .004 0.10 gate lead 4x e 2x e seating plane 4 2 3 ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? ?????? note 7 e5 e5 e5 .346 .350 8.79 8.89 to - 270 wb - 4 plastic mrf6s19060nr1
mrf6s19060nr1 MRF6S19060NBR1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1
mrf6s19060nr1 MRF6S19060NBR1 15 rf device data freescale semiconductor
16 rf device data freescale semiconductor mrf6s19060nr1 MRF6S19060NBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s19060n rev. 3, 5/2006

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